TLP631,tlp632 2002-09-25 1 toshiba photocoupler gaas ired & photo ? transistor TLP631,tlp632 programmable controllers ac / dc ? input module solid state relay the toshiba TLP631 and tlp632 consist of a photo ? transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic dip. tlp632 is no ? base internal connection for high ? emi environments. collector ? emitter voltage: 55 v (min.) current transfer ratio: 50% (min.) rank gb: 100% (min.) isolation voltage: 5000v rms (min.) ul recognized: ul1577, file no. e67349 pin configurations (top view) 1 2 3 4 6 1: anode 2: cathode 3: n.c. 4: emitter 5: collector 6: base TLP631 5 1 2 3 4 6 1: anode 2: cathode 3: n.c. 4: emitter 5: collector 6: n.c tlp632 5 toshiba 11 ? 7a8 weight: 0.4 g unit in mm
TLP631,tlp632 2002-09-25 2 maximum ratings (ta = 25c) characteristic symbol rating unit forward current if 60 ma forward current derating (ta 39c) ? i f / c 0.7 ma / c peak forward current (100s pulse, 100pps) i fp 1 a reverse voltage v r 5 v led junction temperature t j 125 c collector emitter voltage v ceo 55 v collector base voltage (TLP631) v cbo 80 v emitter collector voltage v eco 7 v emitter base voltage (TLP631) v ebo 7 v collector current i c 50 ma power dissipation p c 150 mw power dissipation derating (ta 25c) ? p c / c 1.5 mw / c detector junction temperature t j 125 c storage temperature range t stg 55~125 c operating temperature range t opr 55~100 c lead soldering temperature (10s) t sol 260 c total package power dissipation p t 250 mw total package power dissipation derating (ta 25c) ? p t / c 2.5 mw / c isolation voltage (ac, 1 min., r.h. 60%) bv s 5000 v rms recommended operating conditions characteristic symbol min. typ. max. unit supply voltage v cc D 5 24 v forward current i f D 16 25 ma collector current i c D 1 10 ma operating temperature t opr 25 D 85 c
TLP631,tlp632 2002-09-25 3 individual electrical characteristics (ta = 25c) characteristic symbol test condition min. typ. max. unit forward voltage v f i f = 10 ma 1.0 1.15 1.3 v reverse current i r v r = 5v D D 10 a led capacitance c t v = 0, f = 1 mhz D 30 D pf collector emitter breakdown voltage v (br) ceo i c = 0.5 ma 55 D D v emitter collector breakdown voltage v (br) eco i e = 0.1 ma 7 D D v collector base breakdown voltage (TLP631) v (br) cbo i c = 0.1 ma 80 D D v emitter base breakdown voltage (TLP631) v (br) ebo i e = 0.1 ma 7 D D v v ce = 24 v D 10 100 na collector dark current i ceo v ce = 24 v, ta = 85c D 2 50 a detector capacitance collector to emitter c ce v = 0, f = 1 mhz D 10 D pf coupled electrical characteristics (ta = 25c) characteristic symbol test condition min. typ. max. unit 50 D 600 current transfer ratio i c / i f i f = 5 ma, v ce = 5 v rank gb 100 D 600 % D 60 D saturated ctr i c / i f (sat) i f = 1 ma, v ce = 0.4 v rank gb 30 D D % collector emitter saturation voltage v ce (sat) i c = 2.4 ma, i f = 8 ma D D 0.4 v
TLP631,tlp632 2002-09-25 4 isolation characteristics (ta = 25c) characteristic symbol test condition min. typ. max. unit capacitance (input to output) c s v s = 0, f = 1 mhz D 0.8 D pf isolation resistance r s v s = 500 v, r.h. 60% 510 10 10 14 D ? ac, 1 minute 5000 D D ac, 1 second, in oil D 10000 D v rms isolation voltage bv s dc, 1 minute, in oil D 10000 D v dc switching characteristics (ta = 25c) characteristic symbol test condition min. typ. max. unit rise time t r D 2 D fall time t f D 3 D turn on time t on D 3 D turn off time t off v cc = 10 v, i c = 2 ma r l = 100 ? D 3 D s turn on time t on D 2 D storage time t s D 15 D turn off time t off r l = 1.9 k ? (fig.1) r be = open v cc = 5 v, i f = 16 ma D 25 D s turn on time t on D 2 D storage time t s D 12 D turn off time t off r l = 1.9 k ? (fig.1) r be = 220 k ? (TLP631) v cc = 5 v, i f = 16 ma D 20 D s fig. 1 switching time test circuit i f r l v cc v ce r be v ce t on i f t off v cc 4.5v 0.5v t s
TLP631,tlp632 2002-09-25 5 i f ? ta ambient temperature ta (c) allowable forward current i f (ma) 100 0 ? 20 80 60 40 20 0 20 40 60 80 120 100 ? v f / ? ta ? i f forward current i f (ma) forward voltage temperature coefficient ? v f / ? ta ( m v / c ) -3.2 -0.4 0.1 0.3 1 3 10 30 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 i f ? v f foward voltage v f (v) forward current i f (ma) 100 0.1 0.4 50 30 3 1 0.3 0.6 0.8 1.0 1.2 1.4 1.6 0.5 5 10 ta = 25c p c ? ta ambient temperature ta (c) allowable collector power dissipation p c (mw) 200 0 -20 160 120 80 40 0 20 40 60 80 120 100 i fp ? d r duty cycle ratio d r pulse forward current i fp (ma) 5000 10 10 ? 3 1000 500 300 100 50 30 10 ? 2 10 ? 1 10 3 3 3 3 3000 pulse width 100s ta = 25c i fp ? v fp pulse forward voltage v f (v) pulse forward current i fp (ma) 0.4 1000 1 500 300 30 10 3 0.8 1.2 1.6 2.0 2.4 5 50 100 pulse width 100s repetitive frequency = 100 hz ta = 2 5 c
TLP631,tlp632 2002-09-25 6 i c /i f ? i f forward current if ma current transfer ratio i c /i f (%) TLP631 i ?i f at r be forward current i f (ma) collector current i c (ma) i c ? v ce collector-emitter voltage v ce (v) collector current i c (ma) 80 0 0 60 40 20 2 4 6 8 10 ta = 25c i f = 5 ma 50 ma p c max. 30 ma 20 ma 15 ma 10 ma i c ? i f forward current i f (ma) collector current i c (ma) 0.3 1 10 100 300 1000 3 30 100 0.03 10 5 05 0.1 50 30 3 1 0.3 0.05 sample a sample b ta = 25c v ce = 5 v v ce = 0.4 v 100 0.1 5 3 1 0.3 0.3 1 3 10 30 100 50 30 10 0.5 0.1 ta = 25c v ce = 5 v 1000 10 0.3 500 100 50 30 1 3 10 30 100 300 ta = 25c v ce = 5 v v ce = 0.4 v sample b sample a 50 k ? 100 k ? 500 k ? r be = a i f v cc be r forward current i f (ma) TLP631 i pb ? i f base photo current i pb (a) 300 0.1 0.3 100 10 3 1 3 10 30 100 300 50 30 5 0.3 0.5 0.1 1 ta = 25c v cb = 0 v v cb = 5 v a i f v cb i c ? v ce collector-emitter voltage v ce (v) collector current i c (ma) 30 0 0 25 20 15 10 5 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ta = 2 5 c 50 ma 40 ma 30 ma 20 ma 10 ma 5 ma i f = 2 ma
TLP631,tlp632 2002-09-25 7 v ce(sat) ? ta ambient temperature ta (c) collector-emitter saturation voltage v ce(sat) (v) 0.20 0 -40 0.16 0.12 0.08 0.04 -20 0 20 40 60 100 80 i f = 5 ma i c = 1 ma TLP631 switching time ? r be base-emitter resistance r be ( ? ) switching time (s) 100k 300k 1m 3m 50 1 30 5 3 10 ta = 25c i f = 16 ma v cc = 5 v r l = 1.9 k ? i ceo ? ta ambient temperature ta (c) collector dark current i ceo (a) 10 1 10 -4 0 10 0 10 -1 10 -2 10 -3 20 40 60 80 120 100 v ce = 24 v 5 v 10 v i c ? ta ambient temperature ta (c) collector current i c ma) 100 0.1 50 10 5 1 -20 0 20 40 60 100 80 30 3 0.5 0.3 v ce = 5 v i f = 25 ma 10 ma 5 ma 1 ma 0.5 ma TLP631 switching time ? r l load resistance r l (k ? ) switching time (s) 1 3 10 30 100 50 1 30 5 3 10 ta = 25c i f = 16 ma v cc = 5 v r be = 220 k ? ts t on t off t off ts t on
TLP631,tlp632 2002-09-25 8 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. gallium arsenide (gaas) is a substance used in the products described in this document. gaas dust and fumes are toxic. do not break, cut or pulverize the product, or use chemicals to dissolve them. when disposing of the products, follow the appropriate regulations. do not dispose of the products with other industrial waste or with domestic garbage. the products described in this document are subject to the foreign exchange and foreign trade laws. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ebc restrictions on product use
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